BAR64 series are high voltage current controlled RF resistors suitable for RF attenuators and switches. This series has very low reverse bias capacitance, frequency range of 1MHz to 6GHz, very suitable for RF applications
The BAR64 series are silicon PIN diodes designed for RF attenuation and switching applications. They operate from 1 MHz up to 6 GHz, offering very low capacitance (as low as 0.17 pF) and low forward resistance (typ. 2.1 Ω at 10 mA).
The datasheet provides maximum ratings, thermal resistance, DC and AC electrical characteristics, and permissible pulse load limits for the various package variants (e.g., BAR64‑02L, BAR64‑04W). Typical values include a reverse voltage of 150 V, forward current of 100 mA, and junction temperature rating of 150 °C.
| Reverse voltage (V_R) | 150 V |
|---|---|
| Forward current (I_F) | 100 mA |
| Junction temperature (T_J) | 150 °C |
| Operating temperature range | -55 °C to 125 °C |
| Typical forward voltage at 100 mA | 1.1 V |
| Diode capacitance at 1 MHz (V_E=20 V) | 0.23 pF |
| Diode capacitance at 100 MHz (V_E=0 V) | 0.30 pF |
The BAR64 series can withstand a reverse voltage of up to 150 V.
The typical forward voltage is 1.1 V at a forward current of 100 mA.
The capacitance is about 0.23 pF at 1 MHz with a 20 V reverse bias.
The devices operate from –55 °C up to 125 °C.