FDMS86101DC is a N-Channel MOSFET produced by Fairchild Semiconductor. It uses the advanced Power Trench® process to achieve extremely low on-resistance and excellent switching performance. It is suitable for applications such as DC-DC converters, synchronous rectifiers and load switches.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86101DC, an N-Channel Dual Cool Power Trench MOSFET. The device features a PQFN package designed for top-side cooling and utilizes advanced Power Trench technology to achieve low on-resistance and excellent switching performance.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as 100V drain-to-source voltage and 60A continuous drain current (package limited). It details thermal resistance values under various mounting conditions, capacitance parameters, and switching characteristics. Additionally, the document includes typical characteristic curves for on-resistance, transfer characteristics, gate charge, and safe operating areas.
| Drain to Source Voltage (VDS) | 100 V |
|---|---|
| Gate to Source Voltage (VGS) | +20 V |
| Continuous Drain Current (Package Limited) | 60 A |
| Continuous Drain Current (Silicon Limited) | 88 A |
| Power Dissipation (Ta = 25°C) | 125 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.3 °C/W (Top Source), 1.0 °C/W (Bottom Drain) |
| Thermal Resistance (Junction to Ambient) | 38 °C/W |
The MOSFET operates and stores within a range of -55 to +150 °C.