The FDMS86101 is an N-channel PowerTrench® MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process. It features low on-state resistance and high efficiency.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86101, an N-Channel PowerTrench MOSFET rated at 100 V, 60 A continuous drain current (package limited), and 8 mΩ on-resistance. The device utilizes advanced packaging to minimize on-state resistance while maintaining superior switching performance.
| Drain to Source Voltage (Vds) | 100 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Package Limited) | 60 A |
| On-Resistance (Typical at Vgs=10V, Id=13A) | 8 mΩ |
| Power Dissipation (Tc = 25°C) | 104 W |
The maximum continuous drain current is 60 A when the temperature is 25°C.
The maximum power dissipation is 104 W when the case temperature is 25°C.
The maximum drain to source voltage rating is 100 V.