This document describes the features and characteristics of the FDMS8570SDC N-Channel PowerTrench® SyncFETTM product, including maximum rDS(on), high performance technology, and RoHS compliance.
The document describes the Fairchild Semiconductor FDMS8570SDC, an N-Channel SyncFET produced using PowerTrench technology. It features a dual Cool POQFN package and includes an efficient monolithic Schottky body diode for synchronous rectification applications.
Key electrical characteristics include a maximum drain-to-source voltage of 25V, a continuous drain current of 60A (package limited), and a static on-resistance ranging from 2.4 mΩ to 3.3 mΩ depending on test conditions.
| Drain to Source Voltage (VDS) | 25 V |
|---|---|
| Gate to Source Voltage (VGS) | 12 V |
| Continuous Body Diode Current (IBD) | 28 A |
| Power Dissipation Ta=25°C | 59 W |
| Operating Junction Temperature Range | -55 to +150 °C |
It is suitable for synchronous rectifiers in DC/DC converters and telecom secondary side rectification.
The device uses a Dual Cool POQFN package.