FDMS8570S N-Channel PowerTrench® SyncFETTM is a high performance power device produced using Fairchild Semiconductor's advanced PowerTrench® process. This device has extremely low Rds(on) and is suitable for DC/DC converters, telecom secondary side rectification and high end server/workstation applications.
This document is a technical datasheet for the Fairchild Semiconductor FDMS8570S, an N-Channel PowerTrench SyncFET. The device features a maximum drain current of 60A and utilizes advanced silicon and package technologies to achieve low on-resistance while maintaining excellent switching performance.
The datasheet provides comprehensive electrical characteristics, including maximum ratings for voltage and current, thermal resistance values, and dynamic parameters such as input capacitance and gate charge. It also details the typical operating curves for on-resistance versus temperature and drain current, along with specific information regarding the integrated Schottky body diode reverse recovery characteristics.
| Drain to Source Voltage (Vds) | 25 V |
|---|---|
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (Ta = 25°C) | 60 A |
| Pulsed Drain Current | 100 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device operates and stores within a junction temperature range of -55 to +150 °C.
The maximum power dissipation is 48 W when the case temperature is 25°C.