Key facts
- Brand
- Toshiba
- Model
- 2SK2838
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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Toshiba 2SK2838 Field Effect Transistor Datasheet
This document is a technical datasheet for the Toshiba 2SK2838, an enhancement-mode silicon N-channel MOS type field effect transistor. It is designed for high-speed, high-current switching applications such as chopper regulators, DC-DC converters, and motor drives.
The datasheet provides maximum ratings including a drain-source voltage of 400V and a continuous drain current of 55A. It details electrical characteristics like gate threshold voltage, on-resistance, and capacitance values at 25°C. Additionally, it includes graphical data for safe operating areas, transient thermal impedance, and switching performance curves.
Toshiba 2SK2838 specifications
| Drain-Source Voltage (Vdss) | 400 V |
|---|---|
| Gate Threshold Voltage (Vth) | 2.0 ~ 4.0 V |
| Drain Power Dissipation (Pd) | 40 W |
| Thermal Resistance, Channel to Case (Rth(ch-c)) | 3.125 °C/W |
All Toshiba 2SK2838 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical on-resistance of this transistor?
The low drain-source ON resistance (Rds(on)) is typically 0.84 Ohms.
What is the maximum drain‑source voltage for the Toshiba 2SK2838?
The device can withstand up to 400 V drain‑source voltage.
What is the typical on‑resistance of the 2SK2838?
The typical on‑resistance is 0.84 Ω.