Key facts
- Brand
- Toshiba
- Model
- RN1111
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 2
- Languages
- JA
- Last added
- 2011-11-18
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Toshiba RN1110/RN1111 Datasheet
The RN1110 and RN1111 are silicon NPN epitaxial transistors that incorporate a built‑in bias resistor, reducing part count and enabling smaller, easier‑to‑assemble circuits. They are offered in a range of resistance values to suit various circuit designs.
The datasheet lists key electrical parameters such as collector‑base voltage, collector‑emitter voltage, leakage currents, current gain, saturation voltage, transition frequency and parasitic capacitance, as well as handling and safety guidelines for designers using Toshiba semiconductor products. This manual is written in Japanese.
Toshiba RN1111 specifications
| Collector‑Base Voltage (VcBO) | 50 V |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 50 V |
| Emitter‑Base Voltage (VEBO) | 5 V |
| Collector Current (Ic) | 100 mA |
| Collector Power Dissipation (Pc) | 100 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
Source: Toshiba RN1110/RN1111 Datasheet
All Toshiba RN1111 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑base voltage of the RN1110/RN1111?
The maximum collector‑base voltage is 50 V.
What type of transistor are the RN1110 and RN1111?
They are silicon NPN epitaxial transistors with built‑in bias resistors.