Key facts
- Brand
- Toshiba
- Model
- 2SA1162
- Industry
- Industrial
- Documents
- 2
- Languages
- EN · JA
- Last added
- 2012-06-01
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Toshiba 2SA1162 PNP Transistor Datasheet
The Toshiba 2SA1162 is a silicon PNP epitaxial transistor designed for audio‑frequency general‑purpose amplifier applications. It offers high voltage and current capability in a small SC‑59 package.
The datasheet lists maximum ratings such as 50 V collector‑base voltage, 150 mA collector current, and 150 mW power dissipation, as well as electrical characteristics including low noise figure (1 dB typ.) and storage temperature range from –55 °C to 125 °C.
Toshiba 2SA1162 specifications
| Collector‑Base Voltage (VCBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -50 V |
| Emitter‑Base Voltage (VEBO) | -5 V |
| Collector Current (Ic) | 150 mA |
| Base Current (Ib) | 30 mA |
| Power Dissipation (P0) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 to 125 °C |
| Noise Figure (NF) | 1 dB (typ.) |
All Toshiba 2SA1162 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the Toshiba 2SA1162?
The collector current is rated at 150 mA.
What are the voltage ratings of the Toshiba 2SA1162 transistor?
It has a collector‑base rating of 50 V, collector‑emitter rating of 50 V, and emitter‑base rating of 5 V.
What is the maximum collector current for the Toshiba 2SA1162?
The maximum collector current is -150 mA.
What voltage ratings does the 2SA1162 have for collector‑base and collector‑emitter junctions?
Both the collector‑base and collector‑emitter voltages are rated at -50 V.