Key facts
- Brand
- Toshiba
- Model
- 2SK2615
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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TOSHIBA 2SK2615 Manual(1)
The Toshiba 28K2615 is an N‑channel silicon MOSFET designed for DC‑DC converter, relay drive and motor drive applications. It features a low drain‑source on‑resistance of 0.28 Ω (typ.) and can handle a drain‑source voltage of up to 60 V.
The device is supplied in a lead‑free ceramic substrate package (25.4 mm × 25.4 mm × 0.8 mm) and is electrostatic‑sensitive, requiring careful handling. It is intended for general electronics use such as computers, office equipment, measuring instruments, industrial robotics and domestic appliances, but is not recommended for safety‑critical or high‑reliability applications.
Toshiba 2SK2615 specifications
| Drain‑source voltage (VDS) | 60 V (max) |
|---|---|
| Gate‑source voltage (VGS) | +20 V (max) |
| On‑resistance (RDS(ON)) | 0.28 Ω (typ.) |
| Continuous drain reverse current | 2 A |
| Input capacitance (Ciss) | 150 pF |
| Package dimensions | 25.4 mm × 25.4 mm × 0.8 mm |
| Weight | 0.05 g (typ.) |
Source: TOSHIBA 2SK2615 Manual(1)
All Toshiba 2SK2615 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the Toshiba 28K2615?
The device can withstand a drain‑source voltage of up to 60 V.
What is the typical on‑resistance of the 28K2615 MOSFET?
Its typical on‑resistance is 0.28 Ω.
What is the maximum drain‑source voltage for the 28K2615?
The maximum drain‑source voltage is 60 V.
From: TOSHIBA 2SK2615 Manual