This datasheet describes the Toshiba 2SK2838 N‑channel MOSFET, a high‑speed, high‑current switching device intended for industrial applications such as chopper regulators, DC‑DC converters, and motor drives. It lists the device's maximum voltage and current ratings, on‑resistance, avalanche energy, and thermal limits.
Key sections include Maximum Ratings, Electrical Characteristics, Source‑Drain Diode Ratings, Thermal Characteristics, and Normalized Transient Thermal Impedance, each providing detailed parameters for design and reliability assessment.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V (max) |
| Continuous Drain Current (ID) | 55 A |
| On‑Resistance (RDS(on)) | 0.84 Ω (typ) |
| Avalanche Current (TAR) | 5.5 A |
| Single Pulse Avalanche Energy (EAS) | 223 mJ |
| Thermal Resistance, Junction‑to‑Case (Rth(j‑c)) | 3.125 °C/W |
| Storage Temperature Range | -55 °C to 150 °C |
| Output Capacitance (Coss) | 250 pF |
The device can withstand up to 400 V drain‑source voltage.
The typical on‑resistance is 0.84 Ω.
It can be stored from –55 °C up to 150 °C.