Key facts
- Brand
- Toshiba
- Model
- 2SA1163
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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Toshiba 2SA1163 Datasheet
The 2SA1163 is a PNP silicon epitaxial transistor intended for general‑purpose audio‑frequency amplifier applications. The document lists its maximum voltage and current ratings, noise performance, and typical gain characteristics.
Key specifications include collector‑base voltage of –120 V, collector‑emitter voltage of –120 V, and a collector current rating of 100 mA. The device operates from –55 °C to 125 °C storage temperature and features a typical noise figure of 1 dB and a transition frequency of 100 MHz.
Toshiba 2SA1163 specifications
| Collector‑Base Voltage (VCBO) | -120 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -120 V |
| Emitter‑Base Voltage (VEB) | -5 V |
| Collector Current (Ic) | 100 mA |
| Base Current (Ib) | 20 mA |
| Power Dissipation (P_D) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Noise Figure (NF) – typical | 1 dB |
| Transition Frequency (f_T) | 100 MHz |
Source: Toshiba 2SA1163 Datasheet
All Toshiba 2SA1163 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the 2SA1163?
The maximum collector current is specified as 100 mA.
What temperature range can the 2SA1163 be stored in?
It can be stored from –55 °C up to 125 °C.
What is the maximum collector‑emitter voltage for the 2SA1163?
The maximum collector‑emitter voltage is -120 V.
What is the typical noise figure of the 2SA1163?
The typical noise figure is 1 dB.