Key facts
- Brand
- Toshiba
- Model
- TLP535
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Toshiba TLP535 Datasheet
The TLP535 is a GaAs infrared emitting diode (IRED) optically coupled to a photo‑transistor, packaged in a six‑lead plastic DIP. It is designed for digital isolation in applications such as A/D conversion, computer‑peripheral interfaces, and multiplexed data transmission.
Key specifications include a collector‑emitter voltage rating of 55 V, isolation voltage of 2500 V rms, and a current transfer ratio of at least 60 %. The device features a typical propagation delay of 60 ns (tpLH) and requires a 0.1 µF bypass capacitor between pins 8 and 5 for stable operation.
Toshiba TLP535 specifications
| Collector‑Emitter Voltage | <55 V (Min.) |
|---|---|
| Current Transfer Ratio (CTR) | ≥ 60 % |
| Weight | 0.04 g |
| Forward Current (If) | 20 mA |
Source: Toshiba TLP535 Datasheet
All Toshiba TLP535 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What bypass capacitor is required for the TLP535?
A 0.1 µF capacitor must be connected between pins 8 and 5.
From: Toshiba TLP535 Datasheet
What is the minimum current transfer ratio (CTR) for the TLP535?
The CTR is specified as at least 60 % minimum.
From: Toshiba TLP535 Datasheet
What is the isolation voltage rating of the TLP535?
The device is rated for a minimum isolation voltage of 2500 V rms.
What is the minimum current transfer ratio for the TLP535?
The current transfer ratio is at least 60 %.