Key facts
- Brand
- Toshiba
- Model
- TLP176G
- Category
- Other Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-01
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Toshiba TLP176GA Photocoupler Datasheet
The TLP176GA is a GaAs infrared emitting diode optically coupled to a photo‑MOSFET in a 4‑pin SOP package, intended for surface‑mount use in modem, fax, and other telecommunications applications where space savings are required. The document lists the device's pin configuration, mechanical dimensions, and handling precautions.
Key electrical specifications include peak off‑state voltage, forward and reverse currents, on‑state resistance, isolation voltage, and switching times. Recommended operating conditions and temperature ranges are also provided, along with safety and reliability notes for designers.
Toshiba TLP176G specifications
| Peak off‑state voltage | 400 V (min) |
|---|---|
| Trigger LED current | 3 mA (max) |
| On‑state current | 120 mA (max) |
| Isolation voltage | 1500 Vrms (min) |
| Operating temperature range | -40 °C to 85 °C |
All Toshiba TLP176G documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum off‑state voltage rating?
The device is rated for a peak off‑state voltage of 400 V minimum.
What supply voltage can be applied to the TLP176GA?
The recommended supply voltage can be up to 320 V.
What is the maximum forward current rating for the TLP176GA?
The maximum forward current is 50 mA.
What isolation voltage does the TLP176GA provide?
It provides an isolation voltage of at least 1500 Vrms.
What is the peak off‑state voltage of the TLP176G?
The peak off‑state voltage is specified as 350 V minimum.
What isolation voltage does the TLP176G provide?
It provides an isolation voltage of at least 1500 V rms.
