Key facts
- Brand
- Toshiba
- Model
- 2SK2614
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-05-09
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Toshiba 2SK2614 Datasheet
This document describes the Toshiba 2SK2614 N‑channel MOSFET, intended for high‑speed, high‑current switching applications such as chopper regulators, DC‑DC converters, and motor drives. It includes key electrical parameters, thermal data, and recommended handling precautions for designers.
The sheet lists maximum ratings, typical performance values, and diode characteristics, along with storage temperature limits and marking information. It also contains safety notices regarding electrostatic sensitivity and reliability considerations.
Toshiba 2SK2614 specifications
| Drain‑Source Voltage (VDS) | 50 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Storage Temperature Range | -55 °C to 150 °C |
Source: Toshiba 2SK2614 Datasheet
All Toshiba 2SK2614 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the 2SK2614?
The device can tolerate up to 50 V between drain and source.
How should the 2SK2614 be handled to avoid damage?
It is an electrostatic‑sensitive device; handle with caution and follow ESD precautions.
What is the maximum drain‑source voltage for the 2SK2614?
The maximum drain‑source voltage is 50 V.
What is the typical on‑resistance of the 2SK2614?
The typical on‑resistance is 0.032 Ω.
What is the maximum drain‑source voltage for the 2SK2614?
The maximum drain‑source voltage is 50 V.
What is the typical on‑resistance of the device?
The typical on‑resistance (RDS(on)) is 0.032 Ω.