Key facts
- Brand
- Toshiba
- Model
- RN4987
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 2
- Languages
- JA
- Last added
- 2012-01-11
Start here
Toshiba RN4987 Transistor Datasheet
Datasheet 6 pages · 359 KB · JA
The RN4987 is a silicon NPN/PNP epitaxial transistor with an integrated bias resistor, designed for switching, inverter, interface, and driver circuits. It is offered in an Ultra Super Mini (6‑pin) package that contains two devices, enabling reduced component count and smaller, easier‑to‑assemble equipment.
The document lists absolute maximum ratings, typical electrical parameters, and recommended operating conditions. It also includes handling instructions, reliability notes, and cautions about use in high‑stress or safety‑critical applications. This manual is written in Japanese.
Toshiba RN4987 specifications
| Collector‑Base Voltage (VcBo) | 50 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | 50 V |
| Emitter‑Base Voltage (VEBo) | 6 V |
| Power Dissipation (Pc) | 200 mW |
| Package Type | Ultra Super Mini (6‑pin) |
All Toshiba RN4987 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What package does the RN4987 use?
It is supplied in an Ultra Super Mini (6‑pin) package.