Key facts
- Brand
- Toshiba
- Model
- 2SA1213
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
Start here
Toshiba 2SA1213 PNP Transistor Datasheet
The Toshiba 2SA1213 is a silicon PNP epitaxial transistor intended for power amplifier and switching applications. The datasheet provides maximum ratings, electrical characteristics, and safe operating area information for designers.
Key parameters include collector‑base voltage, emitter‑base voltage, collector current, power dissipation, and temperature limits. The device is mounted on a ceramic substrate and is suitable for high‑speed switching with typical turn‑on times around 1 ns.
Toshiba 2SA1213 specifications
| Collector‑Base Voltage (Vcbo) | 50 V (Max) |
|---|---|
| Emitter‑Base Voltage (Vebo) | 5 V (Max) |
| Collector Current (Ic) | 2 A |
| Base Current (Ib) | 0.4 A |
| Power Dissipation (Pc) | 1000 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Low Saturation Voltage (Vcesat) | 0.5 V (Max) |
| High Speed Switching Time (tgtg) | 1.0 ns (Typ) |
| Power on Ceramic Substrate (Po) | 1–2 W |
All Toshiba 2SA1213 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑base voltage?
The maximum collector‑base voltage is 50 V.
What is the maximum collector current rating?
The transistor can handle up to 2 A of collector current.
What is the maximum collector current for the Toshiba 2SA1213?
The device can handle up to 2 A of collector current.
What are the maximum voltage ratings of the Toshiba 2SA1213?
Collector‑Base voltage is 50 V, collector‑emitter voltage is 50 V, and emitter‑base voltage is 5 V.