Key facts
- Brand
- Toshiba
- Model
- 2SA1015
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH
- Last added
- 2012-06-01
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Toshiba 2SA1015(L) Transistor Datasheet
Datasheet 3 pages · 104 KB · ZH
The 2SA1015(L) is a silicon PNP epitaxial transistor designed for audio‑frequency and low‑noise amplifier applications. It offers high voltage and current capability with good hFE linearity and low noise performance.
The document lists the device's maximum ratings, detailed electrical characteristics, and handling guidelines, helping designers ensure safe and reliable use in a variety of electronic equipment. This manual is written in Chinese.
Toshiba 2SA1015 specifications
| Collector‑Emitter Voltage (VCEO) | -50 V (min) |
|---|---|
| Collector Current (IC) | -150 mA (max) |
| Junction Temperature (Tj) | 125 °C |
| Package Type | JEDEC TO-92 |
All Toshiba 2SA1015 documents by type
User Manual 2
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage for the 2SA1015(L)?
The device is rated for a collector‑emitter voltage of -50 V (minimum rating).
What package does the 2SA1015(L) use?
It is supplied in a JEDEC TO‑92 package.