Key facts
- Brand
- Toshiba
- Model
- TPCS8205
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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Toshiba TPCS8205 MOSFET Datasheet
This document is a technical datasheet for the Toshiba TPCS8205, an N-channel silicon MOSFET (U-MOS II). It highlights features such as low drain-source ON resistance (30 mΩ typical), high forward transfer admittance, and suitability for lithium-ion battery applications like notebook PCs. The device utilizes a small footprint package.
Read onlineToshiba TPCS8205 specifications
| Drain-source voltage (Vdss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (Rds(on)) | 30 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 10 S (typ.) |
| Leakage current (Ipgg) | 10 pA (max) |
All Toshiba TPCS8205 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What applications is the TPCS8205 transistor intended for?
The document lists lithium ion battery applications, portable equipment applications, and notebook PCs as specific uses.
How much weight does a typical unit of this device have?
A typical unit weighs 0.035 g according to the specifications.
What applications are the TPCS8205 transistor intended for?
The device is designed for lithium ion battery and portable equipment applications, as well as notebook PCs.
What is the maximum channel temperature allowed during operation?
The device must be used when the channel temperature remains below 150°C.