Key facts
- Brand
- Toshiba
- Model
- SSM3J01T
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-01
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Toshiba SSM3J01T Power Management Switch Datasheet
Datasheet 5 pages · 157 KB · EN
This document is a datasheet for the Toshiba SSM3J01T, a P-channel MOS type power management switch designed for high-speed switching applications. The device features a small package size and a low on-resistance (Ron) of 0.4 Ω maximum at Vgs = -4 V.
Read onlineToshiba SSM3J01T specifications
| Drain-Source voltage | -30 V |
|---|---|
| Gate-Source voltage | +10 V |
| Drain current (DC) | 17 A |
| Drain current (Pulse) | 34 A |
| Drain power dissipation | 1250 mW |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Drain-Source ON resistance (Vgs = -4V) | 0.4 Ω |
| Drain-Source ON resistance (Vgs = -2.5V) | 0.6 Ω |
| Gate threshold voltage | 0.6 to -1.1 V |
| Turn-on time | 36 ns |
| Turn-off time | 37 ns |
All Toshiba SSM3J01T documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is -30 V.
What is the maximum on-resistance?
The maximum on-resistance is 0.6 Ω when Vgs is -2.5 V.
What is the recommended gate voltage to turn on this device?
The document recommends a gate-source voltage of -2.5 V or higher to turn on this product.
What are the maximum ratings for drain-source voltage and gate-source voltage?
The device has a maximum drain-source voltage rating of -30 V and a maximum gate-source voltage rating of +10 V.