Key facts
- Brand
- Toshiba
- Model
- 2SA1015L
- Category
- Transistor
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-06-01
Start here
Toshiba 2SA1015L Datasheet
The 2SA1015L is a PNP silicon epitaxial transistor designed for low‑noise audio frequency and high‑voltage applications. It offers high linearity and can operate with collector‑base voltages up to 50 V.
The sheet lists maximum ratings such as 150 mA collector current, 400 mW power dissipation, and a junction temperature of 125 °C, together with detailed electrical parameters like noise figure (0.2 dB) and transition frequency (80 MHz).
Toshiba 2SA1015L specifications
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -50 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | -150 mA |
| Base Current (Ib) | -50 mA |
| Power Dissipation (Pd) | 400 mW |
| Junction Temperature (Tj) | 125 °C |
| Noise Figure (NF) | 0.2 dB (typ) |
Source: Toshiba 2SA1015L Datasheet
All Toshiba 2SA1015L documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the 2SA1015L?
The maximum collector current is 150 mA.
What are the voltage ratings of the 2SA1015L transistor?
It is rated for 50 V collector‑base, 50 V collector‑emitter, and 5 V emitter‑base voltages.
What is the maximum collector‑emitter voltage for the 2SA1015(L)?
The device is rated for a collector‑emitter voltage of -50 V (minimum rating).
What package does the 2SA1015(L) use?
It is supplied in a JEDEC TO‑92 package.