Key facts
- Brand
- Toshiba
- Model
- 1SS393
- Industry
- Industrial
- Documents
- 2
- Languages
- EN · JA
- Last added
- 2012-06-07
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Toshiba 1SS393 Schottky Diode Datasheet
Datasheet 2 pages · 115 KB · EN
This document is a datasheet for the TOSHIBA 1SS393, a silicon epitaxial Schottky barrier type diode designed as a low voltage, high speed switching component. It features a small SC-70 package and is rated for maximum peak reverse voltages of 45V.
Read onlineToshiba 1SS393 specifications
| Maximum (Peak) Reverse Voltage | 45 V |
|---|---|
| Reverse Voltage | 40 V |
| Maximum (Peak) Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 1 A |
| Power Dissipation | 100 mW |
| Junction Temperature | 125 °C |
| Operating Temperature Range | -40~100 °C |
| Package Type | SC-70 |
All Toshiba 1SS393 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical forward voltage drop?
The typical forward voltage (Vf) at 1mA is 0.28V.
What is the maximum reverse current?
The maximum reverse current (IR) at 40V is 5uA.
What is the typical forward voltage of the Toshiba 1SS393 diode?
The typical forward voltage is 0.54 V measured at a forward current of 1 mA.
What is the maximum reverse voltage rating for the 1SS393?
The diode is rated for a maximum reverse voltage of 45 V.