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Toshiba 1SS362 Silicon Epitaxial Planar Diode Datasheet
This datasheet details the Toshiba 1SS362, a silicon epitaxial planar diode designed for ultra high speed switching applications. It features a low forward voltage of 0.97V (typical) and fast reverse recovery time of 1.6ns (typical). The diode is packaged in a small form factor with total capacitance of 0.5pF (typical). Maximum ratings include 85V reverse voltage, 240mA peak forward current, and 125°C junction temperature. Electrical characteristics are provided for operating at 25°C, including forward voltage curves and reverse recovery time data.
Read onlineToshiba 1SS362 specifications
| Forward Voltage (100mA) | 0.97 V |
|---|---|
| Reverse Recovery Time | 1.6 ns |
| Total Capacitance | 0.5 pF |
| Maximum Reverse Voltage | 85 V |
| Average Forward Current | 80 mA |
Source: Toshiba 1SS362 Silicon Epitaxial Planar Diode Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical forward voltage at 100mA?
0.97V (typical).
From: Toshiba 1SS362 Silicon Epitaxial Planar Diode Datasheet
What is the reverse recovery time?
1.6ns (typical).
From: Toshiba 1SS362 Silicon Epitaxial Planar Diode Datasheet
What is the maximum reverse voltage rating of the Toshiba 1SS362FV diode?
The diode is rated for a reverse voltage of 85 V.
What is the typical forward voltage at 10 mA for the 1SS362FV?
At a forward current of 10 mA, the typical forward voltage is 0.75 V.