Key facts
- Brand
- Toshiba
- Model
- 1SS314
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
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Toshiba 1SS314 Diode Datasheet
Datasheet 2 pages · 89 KB · EN
This document provides electrical specifications for the Toshiba 1SS314 silicon epitaxial planar diode. It details maximum ratings such as reverse voltage (30V), forward current (100mA), and junction temperature (125°C). Electrical characteristics include forward voltage, reverse current, total capacitance, and series resistance under specified test conditions. The document also includes graphs showing resistance vs. current and capacitance vs. voltage.
Read onlineToshiba 1SS314 specifications
| Reverse Voltage | 30 V |
|---|---|
| Forward Current | 100 mA |
| Junction Temperature | 125 °C |
| Total Capacitance | 1.2 pF (Max.) |
| Series Resistance | 0.5 Ω (Typ.) |
Source: Toshiba 1SS314 Diode Datasheet
All Toshiba 1SS314 documents by type
User Manual 1
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum reverse voltage rating for the 1SS314 diode?
The maximum reverse voltage rating is 30 V.
What is the typical series resistance of the 1SS314 diode?
The typical series resistance is 0.5 Ω.