This document is a datasheet for the TOSHIBA 1SS393, a silicon epitaxial Schottky barrier type diode designed as a low voltage, high speed switching component. It features a small SC-70 package and is rated for maximum peak reverse voltages of 45V.
| Maximum (Peak) Reverse Voltage | 45 V |
|---|---|
| Reverse Voltage | 40 V |
| Maximum (Peak) Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 1 A |
| Power Dissipation | 100 mW |
| Junction Temperature | 125 °C |
| Operating Temperature Range | -40~100 °C |
| Package Type | SC-70 |
The typical forward voltage (Vf) at 1mA is 0.28V.
The maximum reverse current (IR) at 40V is 5uA.
The total capacitance (Cr) at 0V and 1MHz is typically 25pF.