This document describes the features and characteristics of the 1SS393 model from Toshiba. The product is a small silicon epitaxial Schottky barrier diode designed for low voltage high-speed switching, with low forward voltage and small reverse current.
The 1SS393 is a silicon‑epitaxial Schottky barrier diode designed for low‑voltage, high‑speed switching applications. The datasheet lists its typical forward voltage, reverse voltage rating, current limits, and package dimensions.
In addition to electrical specs, the document includes recommended operating temperature ranges, surge current capability, and safety handling notes for designers using the component in various electronic equipment. This manual is written in Japanese.
| Typical forward voltage (VF) at IF=1 mA | 0.54 V |
|---|---|
| Maximum reverse voltage (VR) | 45 V |
| Maximum forward current (IF) | 300 mA |
| Maximum power dissipation (P) | 100 mW |
| Operating temperature range | -40 °C to 100 °C |
The typical forward voltage is 0.54 V measured at a forward current of 1 mA.
The diode is rated for a maximum reverse voltage of 45 V.
It can operate from –40 °C up to 100 °C.