Key facts
- Brand
- Toshiba
- Model
- 1SS269
- Industry
- Industrial
- Documents
- 2
- Languages
- EN · JA
- Last added
- 2012-06-07
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TOSHIBA 1SS269 handbook
This datasheet provides electrical specifications for the Toshiba 18S269 silicon epitaxial planar diode. It includes maximum ratings such as reverse voltage (30V), forward current (50mA), and junction temperature (125°C). Electrical characteristics like forward voltage, reverse current, total capacitance, and series resistance are also listed with test conditions. The document includes graphical data for capacitance and resistance versus current and voltage, and notes on usage and reliability precautions.
Read onlineToshiba 1SS269 specifications
| Forward Current | 50 mA |
|---|---|
| Junction Temperature | 125 °C |
| Forward Voltage | 0.85 V (typical) |
| Reverse Current | 0.1 µA |
| Total Capacitance | 1.2 pF (max) |
| Series Resistance | 0.6 Ω (typical) |
Source: TOSHIBA 1SS269 handbook
All Toshiba 1SS269 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical forward voltage at 2mA?
The typical forward voltage is 0.85 V.
From: TOSHIBA 1SS269 handbook
What is the maximum total capacitance?
The maximum total capacitance is 1.2 pF.
From: TOSHIBA 1SS269 handbook
What is the maximum reverse voltage for the Toshiba 1SS269 diode?
The maximum reverse voltage is 30 V.
From: Toshiba 1SS269 Datasheet
What forward current rating does the Toshiba 1SS269 support?
It is rated for a forward current of 50 mA.
From: Toshiba 1SS269 Datasheet