FDN360P is a P-channel logic level MOSFET produced by Fairchild Semiconductor. The device has low on-state resistance and fast switching characteristics, making it suitable for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
The FDN360P is a single P‑Channel PowerTrench™ MOSFET designed for low‑voltage, battery‑powered applications such as DC/DC converters, load switches and motor drives. It features low on‑state resistance, low gate charge (≈5 nC) and fast switching performance.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and packaging information for SuperSOT‑3 tape‑and‑reel options, including dimensions and reel quantities.
| Drain‑Source Voltage (V_DSS) | -30 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | +20 V |
| Continuous Drain Current (I_D) | -2 A |
| Power Dissipation (P_D) | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (R_θJA) | 250 °C/W |
| Tape‑and‑Reel Quantity per Reel | 3,000 units |
The device is rated for a maximum drain‑source voltage of -30 V.
The typical gate charge is about 5 nC.
The continuous drain current rating is -2 A.