This document introduces the FDN360P single P-channel power MOSFET produced by Fairchild Semiconductor. This device is produced using the advanced Power Trench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance. It is suitable for low voltage and battery powered applications that require low in-line power loss and fast switching.
The document describes the Fairchild Semiconductor FDN360P, a single P-Channel, PowerTrench MOSFET. This device is produced using advanced Power Trench process technology to minimize on-state resistance while maintaining low gate charge for superior switching performance. It is well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Gate Charge (Typical) | 6.2 nC |
| Package Type | SuperSOT™3 |
The device supports a continuous drain current of 2 A.
The maximum power dissipation for single operation is 0.5 W.
The typical gate charge is 6.2 nC.