FDN338P is a P-channel MOSFET from Fairchild using Fairchild’s advanced low voltage PowerTrench process. It has low RDS(ON), high switching speed and is suitable for battery management, load switch and battery protection applications.
The document describes the Fairchild Semiconductor FDN338P, a P-Channel MOSFET utilizing the advanced low voltage PowerTrench process. It is specifically optimized for battery power management applications, including load switches and battery protection circuits. The device features a SuperSOT-3 package designed for low on-resistance and higher power handling capability compared to standard SOT23 packages.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, and switching parameters. It also includes typical performance graphs for on-resistance variation with temperature and gate voltage, as well as thermal resistance data and maximum safe operating area curves.
| Drain-Source Voltage | -20 V |
|---|---|
| Continuous Drain Current | -16 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 250 °C/W |
| Thermal Resistance, Junction-to-Case | 75 °C/W |
| On-Resistance @ Vgs = -2.5V | 115 mΩ |
| On-Resistance @ Vgs = -4.5V | 88 mΩ |
It is optimized for battery power management applications.
It uses the SuperSOT-3 package.
The maximum continuous drain current is -16 A.