FDN338P is a high-performance P-channel logic level enhancement mode field effect transistor using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities.
The FDN338P is a P‑Channel logic level enhancement mode power MOSFET built with Fairchild's high‑density DMOS technology. It is optimized for low‑voltage, battery‑powered applications such as notebook computers, portable phones, and PCMCIA cards, offering fast switching and low on‑state resistance in a compact SuperSOT‑3 package.
Key specifications include a -20 V drain‑source breakdown voltage, continuous drain current of -1.6 A, on‑resistance as low as 0.115 Ω, and operation over a temperature range of –55 °C to 150 °C. Thermal resistance values are 250 °C/W (junction‑to‑ambient) and 75 °C/W (junction‑to‑case), with detailed capacitance and gate‑charge characteristics provided for design integration.
| Drain‑Source Voltage (V_DSS) | -20 V |
|---|---|
| Gate‑Source Voltage (V_GS) | +8 V (continuous) |
| Continuous Drain Current (I_D) | -1.6 A |
| Pulsed Drain Current | 5 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Temperature Range | -55 °C to 150 °C |
| Total Gate Charge (Q_g) | 8.5 nC |
The device can tolerate a drain‑source voltage of up to –20 V.
It is rated for a continuous drain current of –1.6 A.
The transistor operates from –55 °C up to 150 °C.