SSM3J01T is a high-performance power management switch from Toshiba, with small package, low on resistance, low gate threshold voltage and other features
This document is a datasheet for the Toshiba SSM3J01T, a P-channel MOS type power management switch designed for high-speed switching applications. The device features a small package size and a low on-resistance (Ron) of 0.4 Ω maximum at Vgs = -4 V.
| Drain-Source voltage | -30 V |
|---|---|
| Gate-Source voltage | +10 V |
| Drain current (DC) | 17 A |
| Drain current (Pulse) | 34 A |
| Drain power dissipation | 1250 mW |
| Channel temperature | 150 °C |
| Storage temperature range | -55~150 °C |
| Drain-Source ON resistance (Vgs = -4V) | 0.4 Ω |
| Drain-Source ON resistance (Vgs = -2.5V) | 0.6 Ω |
| Gate threshold voltage | 0.6 to -1.1 V |
| Turn-on time | 36 ns |
| Turn-off time | 37 ns |
The maximum drain-source voltage is -30 V.
The maximum on-resistance is 0.6 Ω when Vgs is -2.5 V.
The recommended gate voltage is -2.5 V or higher to turn on this product.