Key facts
- Brand
- Toshiba
- Model
- MT3S14FS
- Industry
- Industrial
- Documents
- 2
- Languages
- JA · EN
- Last added
- 2012-01-11
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Toshiba MT3S14FS Datasheet
The MT3S14FS is a silicon NPN epitaxial planar transistor designed for low‑voltage UHF/VHF operation with low noise. The document lists absolute maximum ratings, electrical characteristics such as collector‑base voltage, collector current, and transition frequency, as well as microwave performance parameters.
The datasheet also includes handling precautions, reliability notes, and legal usage restrictions, emphasizing static‑discharge protection and advising against use in safety‑critical or military applications. Users are directed to consult Toshiba’s reliability handbooks for detailed design guidance. This manual is written in Japanese.
Toshiba MT3S14FS specifications
| Noise figure (NF) | 1.7 dB |
|---|---|
| Maximum collector current (Ic) | 30 mA |
| Maximum base current (Ib) | 10 mA |
| Collector‑emitter voltage (VcEo) | 2.5 V |
| Storage temperature range | -55 °C to 125 °C |
Source: Toshiba MT3S14FS Datasheet
All Toshiba MT3S14FS documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the MT3S14FS?
The maximum collector current is 30 mA.
What temperature range is the device rated for?
The device is rated for storage temperatures from –55 °C to 125 °C.
What is the maximum collector current for the MT3S14FS?
The maximum collector current is 30 mA.
What handling precautions are required for this transistor?
The device is sensitive to electrostatic discharge; tools and equipment must be grounded and antistatic measures used when handling.