This document provides electrical specifications for the Toshiba 1SS314 silicon epitaxial planar diode. It details maximum ratings such as reverse voltage (30V), forward current (100mA), and junction temperature (125°C). Electrical characteristics include forward voltage, reverse current, total capacitance, and series resistance under specified test conditions. The document also includes graphs showing resistance vs. current and capacitance vs. voltage.
| Reverse Voltage | 30 V |
|---|---|
| Forward Current | 100 mA |
| Junction Temperature | 125 °C |
| Total Capacitance | 1.2 pF (Max.) |
| Series Resistance | 0.5 Ω (Typ.) |
The maximum reverse voltage rating is 30 V.
The typical series resistance is 0.5 Ω.
The maximum forward current is 100 mA.