This datasheet provides electrical specifications for the Toshiba 18S269 silicon epitaxial planar diode. It includes maximum ratings such as reverse voltage (30V), forward current (50mA), and junction temperature (125°C). Electrical characteristics like forward voltage, reverse current, total capacitance, and series resistance are also listed with test conditions. The document includes graphical data for capacitance and resistance versus current and voltage, and notes on usage and reliability precautions.
| Forward Current | 50 mA |
|---|---|
| Junction Temperature | 125 °C |
| Forward Voltage | 0.85 V (typical) |
| Reverse Current | 0.1 µA |
| Total Capacitance | 1.2 pF (max) |
| Series Resistance | 0.6 Ω (typical) |
The typical forward voltage is 0.85 V.
The maximum total capacitance is 1.2 pF.
The typical series resistance is 0.6 Ω.