1SS269 is a silicon planar diode produced by Toshiba. It is suitable for VHF tuner channel switching and has the characteristics of small size, small capacity, and small forward resistance.
The Toshiba 1SS269 is a silicon epitaxial planar diode designed for VHF tuner band‑switch applications. It features a small package and low capacitance, making it suitable for high‑frequency circuits.
The datasheet lists absolute maximum ratings and electrical characteristics such as a reverse voltage of 30 V, forward current of 50 mA, storage temperature range –55 °C to 125 °C, and junction capacitance of 0.8‑1.2 pF, along with handling and safety recommendations. This manual is written in Japanese.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Forward Current (IF) | 50 mA |
| Storage Temperature | -55 °C to 125 °C |
| Junction Capacitance (CT) | 0.8‑1.2 pF |
| Series Resistance (s) | 0.6‑0.9 Ω |
The maximum reverse voltage is 30 V.
It is rated for a forward current of 50 mA.
The device can be stored between –55 °C and 125 °C.
The junction capacitance ranges from 0.8 pF to 1.2 pF.