This document introduces the TPCS8205 model of TOSHIBA field effect transistor, which is suitable for lithium-ion battery and portable equipment applications. This model features a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement-mode characteristics.
This document is a technical datasheet for the Toshiba TPCS8205, an N-channel silicon MOSFET (U-MOS II). It highlights features such as low drain-source ON resistance (30 mΩ typical), high forward transfer admittance, and suitability for lithium-ion battery applications like notebook PCs. The device utilizes a small footprint package.
| Drain-source voltage (Vdss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (Rds(on)) | 30 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 10 S (typ.) |
| Leakage current (Ipgg) | 10 pA (max) |
The document lists lithium ion battery applications, portable equipment applications, and notebook PCs as specific uses.
A typical unit weighs 0.035 g according to the specifications.
The device must be used when the channel temperature stays below 150°C.