This document introduces the features and characteristics of the TPCS8205 field effect transistor product, which is suitable for lithium-ion battery applications and portable equipment applications. It has a small and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.
This document is a technical datasheet for the Toshiba TPCS8205, an enhancement-mode N-channel MOS type field-effect transistor (U-MOS II). It is designed for applications such as lithium-ion battery management and portable equipment. The device features a small footprint package with low drain-source ON resistance.
| Drain-source voltage (Vdss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (Rdson) | 30 mQ (typ.) |
| Forward transfer admittance (|Yfs|) | 10 S (typ.) |
| Leakage current (Ipgg) | 10 pA (max) |
The device is designed for lithium ion battery and portable equipment applications, as well as notebook PCs.
The device must be used when the channel temperature remains below 150°C.
The package measures 25.4 x 25.4 x 0.8 mm when mounted on a glass-epoxy board.