Key facts
- Brand
- Toshiba
- Model
- TPC8004
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-07
Start here
Toshiba TPC8004 MOSFET Datasheet
Datasheet 7 pages · 500 KB · EN
This document is a technical datasheet for the Toshiba TPC8004, an N-channel silicon MOS type field effect transistor. It is designed for applications including lithium-ion batteries, portable equipment, and notebook PCs. The device features a small footprint package with low drain-source ON resistance of 37 mΩ (typical) and high forward transfer admittance.
Read onlineToshiba TPC8004 specifications
| Drain-source voltage | 30 V |
|---|---|
| Gate threshold voltage | 0.8~2.0 V |
| Drain-source ON resistance | 37 mΩ (typ.) |
| Forward transfer admittance | 6 S (typ.) |
Source: Toshiba TPC8004 MOSFET Datasheet
All Toshiba TPC8004 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this MOSFET?
This transistor is intended for lithium ion battery, portable equipment, and notebook PC applications.
How much weight does a single unit of this device have?
The typical weight of the TPC8004 is 0.080 g.
What is the maximum drain‑source voltage for the TPC8004?
The device is rated for a maximum drain‑source voltage of 30 V.
What is the typical on‑resistance of the TPC8004?
Its typical on‑resistance is 37 mΩ.