This document describes the TPC8004 model of TOSHIBA field-effect transistor, which is suitable for lithium-ion battery applications, portable equipment applications, and notebook PC applications. This transistor features small size, low drain-source on resistance, high forward transfer admittance, and low leakage current.
The TPC8004 is a silicon N‑channel MOSFET designed for lithium‑ion battery, portable equipment, and notebook PC applications. It offers a small footprint, low on‑resistance, and high forward transfer admittance, making it suitable for space‑constrained power circuits.
Key specifications include a 30 V drain‑source rating, 37 mΩ typical on‑resistance, and a gate threshold of 0.8‑2.0 V. Thermal resistance is 21 °C/W and the device can handle pulse currents up to 5 A with a 24 W power dissipation limit for 10 s. The datasheet also outlines handling precautions and usage restrictions for safety‑critical applications.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| On‑resistance (RDS(on)) | 37 mΩ (typ.) |
| Gate threshold voltage (Vth) | 0.8 ~ 2.0 V |
| Input capacitance (Ciss) | 475 pF |
| Peak pulse current (IAR) | 5 A |
| Power dissipation (10 s pulse) | 24 W |
| Thermal resistance (Rth ch‑a) | 21 °C/W (typ.) |
The device is rated for a maximum drain‑source voltage of 30 V.
Its typical on‑resistance is 37 mΩ.
The channel temperature must stay below 150 °C, and the storage temperature range is –55 °C to 150 °C.