TPC8004 is a TOSHIBA field effect transistor suitable for lithium ion battery applications, portable equipment applications, and notebook PC applications. Its features include small footprint, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.
This document is a technical datasheet for the Toshiba TPC8004, an N-channel silicon MOS type field effect transistor. It is designed for applications including lithium-ion batteries, portable equipment, and notebook PCs. The device features a small footprint package with low drain-source ON resistance of 37 mΩ (typical) and high forward transfer admittance.
| Drain-source voltage | 30 V |
|---|---|
| Gate threshold voltage | 0.8~2.0 V |
| Drain-source ON resistance | 37 mΩ (typ.) |
| Forward transfer admittance | 6 S (typ.) |
This transistor is intended for lithium ion battery, portable equipment, and notebook PC applications.
The typical weight of the TPC8004 is 0.080 g.