2SA1213Y supplier
The Toshiba 2SA1213 is a silicon PNP epitaxial transistor intended for power amplifier and switching applications. The datasheet provides maximum ratings, electrical characteristics, and safe operating area information for designers.
Key parameters include collector‑base voltage, emitter‑base voltage, collector current, power dissipation, and temperature limits. The device is mounted on a ceramic substrate and is suitable for high‑speed switching with typical turn‑on times around 1 ns.
| Collector‑Base Voltage (Vcbo) | 50 V (Max) |
|---|---|
| Emitter‑Base Voltage (Vebo) | 5 V (Max) |
| Collector Current (Ic) | 2 A |
| Base Current (Ib) | 0.4 A |
| Power Dissipation (Pc) | 1000 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Low Saturation Voltage (Vcesat) | 0.5 V (Max) |
| High Speed Switching Time (tgtg) | 1.0 ns (Typ) |
| Power on Ceramic Substrate (Po) | 1–2 W |
The maximum collector‑base voltage is 50 V.
The transistor can handle up to 2 A of collector current.
It can be stored from –55 °C up to 150 °C.
The junction temperature rating is 150 °C.