The 2SA1213 is a silicon PNP epitaxial transistor (PCT process) offered in a small flat package. It is intended for power amplifier and power switching applications, with low saturation voltage and high‑speed switching performance.
The datasheet lists the device's maximum voltage and current ratings, power dissipation limits, temperature ranges, and characteristic curves for various bias conditions, providing designers with the necessary parameters for reliable circuit design.
| Collector‑Base Voltage (V CBO) | 50 V (max) |
|---|---|
| Collector‑Emitter Voltage (V CEO) | 50 V (max) |
| Emitter‑Base Voltage (V EBO) | 5 V (max) |
| Collector Current (I C) | 2 A (max) |
| Power Dissipation (P C) | 1 W (1000 mW max) |
| Junction Temperature (T J) | 150 °C (max) |
| Storage Temperature Range (T stg) | -55 °C to 150 °C |
| Low Saturation Voltage (V CE(sat)) | 0.5 V (max) |
The device can handle up to 2 A of collector current.
Collector‑Base voltage is 50 V, collector‑emitter voltage is 50 V, and emitter‑base voltage is 5 V.
The transistor can dissipate up to 1 W (1000 mW).
It is rated for storage temperatures from –55 °C to 150 °C, with a maximum junction temperature of 150 °C.