The 2SA1163 is a PNP silicon epitaxial transistor intended for general‑purpose audio‑frequency amplifier applications. The document lists its maximum voltage and current ratings, noise performance, and typical gain characteristics.
Key specifications include collector‑base voltage of –120 V, collector‑emitter voltage of –120 V, and a collector current rating of 100 mA. The device operates from –55 °C to 125 °C storage temperature and features a typical noise figure of 1 dB and a transition frequency of 100 MHz.
| Collector‑Base Voltage (VCBO) | -120 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -120 V |
| Emitter‑Base Voltage (VEB) | -5 V |
| Collector Current (Ic) | 100 mA |
| Base Current (Ib) | 20 mA |
| Power Dissipation (P_D) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Noise Figure (NF) – typical | 1 dB |
| Transition Frequency (f_T) | 100 MHz |
The maximum collector current is specified as 100 mA.
It can be stored from –55 °C up to 125 °C.
The typical noise figure is 1 dB.