The Toshiba 2SA1163 is a PNP silicon epitaxial transistor intended for general‑purpose audio‑frequency amplifier applications. It is supplied in a small TO‑236 package and is designed for high voltage and low noise performance.
The datasheet provides maximum ratings, electrical characteristics, and typical performance parameters such as collector‑base voltage, collector‑emitter voltage, current gain, power dissipation, and noise figure, along with recommended operating conditions.
| Collector‑Base Voltage (VCBO) | -120 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -120 V |
| Emitter‑Base Voltage (VEB) | -5 V |
| Collector Current (Ic) | -100 mA |
| Base Current (Ib) | -20 mA |
| Power Dissipation (P0) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55~125 °C |
| Noise Figure (NF) | 1 dB (Typ.) |
| Transition Frequency (fT) | 100 MHz |
| Package | Small |
The maximum collector‑emitter voltage is -120 V.
The typical noise figure is 1 dB.
It is supplied in a small package.
The transition frequency is 100 MHz.