The Toshiba 2SA1162 is a silicon PNP epitaxial transistor designed for audio‑frequency general‑purpose amplifier applications. It offers high voltage and current capability in a small SC‑59 package.
The datasheet lists maximum ratings such as 50 V collector‑base voltage, 150 mA collector current, and 150 mW power dissipation, as well as electrical characteristics including low noise figure (1 dB typ.) and storage temperature range from –55 °C to 125 °C.
| Collector‑Base Voltage (VCBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -50 V |
| Emitter‑Base Voltage (VEBO) | -5 V |
| Collector Current (Ic) | 150 mA |
| Base Current (Ib) | 30 mA |
| Power Dissipation (P0) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 to 125 °C |
| Noise Figure (NF) | 1 dB (typ.) |
The collector current is rated at 150 mA.
It has a collector‑base rating of 50 V, collector‑emitter rating of 50 V, and emitter‑base rating of 5 V.
The typical noise figure is about 1 dB.
Store the transistor between –55 °C and +125 °C.