2SA1162 is a low voltage, high power NPN transistor produced by Toshiba. Its main features are high voltage, large current and high current gain, suitable for low frequency and low frequency low noise amplification circuits.
The 2SA1162 is a silicon PNP epitaxial transistor designed for low‑frequency, low‑noise amplification. It offers high current gain, high breakdown voltage, and robust collector current capability, making it suitable for audio and RF pre‑amplifier stages.
The datasheet lists key specifications such as collector‑base voltage of -50 V, collector‑emitter voltage of -50 V, maximum collector current of -150 mA, and a typical noise figure of 1 dB. Package options include JEDEC TO‑236MOD and JEITA SC‑59, and the document includes reliability notes and usage restrictions for safety‑critical applications. This manual is written in Japanese.
| Collector‑Base Voltage (VcBo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | -50 V |
| Emitter‑Base Voltage (VEBo) | -5 V |
| Maximum Collector Current (Ic) | -150 mA |
| Maximum Base Current (Ib) | -30 mA |
| Power Dissipation (Pc) | 150 mW |
| Noise Figure (NF) | 1 dB (typical) |
| Current Gain (hFE) | 70‑400 |
| Package Types | TO‑236MOD, SC‑59 |
The maximum collector current is -150 mA.
Both the collector‑base and collector‑emitter voltages are rated at -50 V.
The typical noise figure is 1 dB.
It is offered in JEDEC TO‑236MOD and JEITA SC‑59 packages.