Key facts
- Brand
- Toshiba
- Model
- RN2115
- Industry
- Industrial
- Documents
- 3
- Languages
- EN · JA
- Last added
- 2012-06-08
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TOSHIBA RN2114 RN2115 RN2116 RN2117 RN2118 handbook
Datasheet 9 pages · 266 KB · EN
This document is a technical datasheet for the Toshiba RN2114, RN2115, RN2116, RN2117, and RN2118 series of Silicon PNP Epitaxial Type transistors. These devices utilize the PCT process and are designed with built-in bias resistors to simplify circuit design for switching, inverter, and interface circuit unit applications.
Read onlineToshiba RN2115 specifications
| Process Type | Silicon PNP Epitaxial Type (PCT Process) |
|---|---|
| Collector-base voltage | -50 V |
| Collector-emitter voltage | -50 V |
| Collector current | -100 mA |
| Collector power dissipation | 100 mW |
| Junction temperature | 150 °C |
All Toshiba RN2115 documents by type
User Manual 2
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector power dissipation for these transistors?
The maximum collector power dissipation is rated at 100 mW.
What are the minimum and maximum storage temperature limits?
The device can be stored between -55°C and 150°C.
What is the maximum collector current for the RN2114‑RN2118 transistors?
The maximum collector current is -100 mA.