RN2114～RN2118 is a PNP type silicon transistor produced by Toshiba. It features high withstand voltage, low current, low power consumption, and is suitable for various switch, drive, interface and other circuits.
The Toshiba RN2114‑RN2118 series are PNP epitaxial transistors with built‑in bias resistors, intended for switching, inverter, interface and driver circuits. The integrated resistors reduce component count, enabling smaller and easier‑to‑assemble designs.
The document provides maximum ratings, detailed electrical parameters, package marking details, and safety notes for general electronic equipment use. It also warns against use in safety‑critical applications such as nuclear, aerospace or medical devices. This manual is written in Japanese.
| Collector‑Base Voltage (V_CBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -50 V |
| Maximum Collector Current (I_C) | -100 mA |
| Collector Power Dissipation (P_C) | 100 mW |
| Maximum Junction Temperature (T_j) | 150 °C |
| Storage Temperature Range (T_stg) | -55 °C to 150 °C |
| Bias Resistor R1 (kΩ) for RN2114 | 1 kΩ |
| Bias Resistor R2 (kΩ) for RN2118 | 10 kΩ |
The maximum collector current is -100 mA.