RN2114~RN2118 is a TOSHIBA NPN type silicon transistor mainly used for switching, inverter, interface circuit and driver circuit, which has the characteristics of built-in bias resistors, simplified circuit design, reduced number of components and manufacturing process.
This document is a technical datasheet for the Toshiba RN2114, RN2115, RN2116, RN2117, and RN2118 series of Silicon PNP Epitaxial Type transistors. These devices utilize the PCT process and are designed with built-in bias resistors to simplify circuit design for switching, inverter, and interface circuit unit applications.
| Process Type | Silicon PNP Epitaxial Type (PCT Process) |
|---|---|
| Collector-base voltage | -50 V |
| Collector-emitter voltage | -50 V |
| Collector current | -100 mA |
| Collector power dissipation | 100 mW |
| Junction temperature | 150 °C |
The maximum collector power dissipation is rated at 100 mW.
The device can be stored between -55°C and 150°C.