Key facts
- Brand
- Toshiba
- Model
- RN2106
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-06
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Toshiba RN2101~RN2106 Transistor Silicon PNP Datasheet
This document provides technical specifications and application information for the Toshiba RN2101~RN2106 series of Silicon PNP Epitaxial Type (PCT Process) transistors. These devices are designed specifically for switching, inverter circuit, interface circuit, and driver circuit applications.
Read onlineToshiba RN2106 specifications
| Collector-base voltage (Vcb) | -50 V |
|---|---|
| Collector-emitter voltage (Vceo) | -50 V |
| Collector current (Ic) | -100 mA |
| Collector power dissipation (Po) | 100 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55~150 °C |
Source: Toshiba RN2101~RN2106 Transistor Silicon PNP Datasheet
All Toshiba RN2106 documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the stated applications for these transistors?
The document lists switching, inverter circuit, interface circuit, and driver circuit applications.
From: Toshiba RN2101~RN2106 Transistor Silicon PNP Datasheet
What is the maximum collector current rating for these transistors?
The maximum collector current rating is -100 mA.
From: Toshiba RN2101~RN2106 Transistor Silicon PNP Datasheet